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In the VST Imulation Plugins folder, there is a subfolder called Plugins. This folder contains a.rar file called Plugins.Waves. This RAR contains the folder of the content of the Plugin.Waves rar file. (The.rar file inside the Plugins.VST folder.)
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A:

You can start sound recorder in Terminal to record it.
You will have the choice of recording within the VSTs or the host application, so you need to choose Soundtrack Pro, which is the host application on Mac.
If it asks you about closing the application, hit the “I’ll be careful” button and it should close up.

The present invention relates to a semiconductor device and a method of fabricating the semiconductor device, and more particularly, to a semiconductor device having metal oxide semiconductor field-effect transistor (MOSFET) and a method of fabricating the semiconductor device.
As shown in FIG. 2, a conventional method of fabricating a semiconductor device includes a process of forming a source/drain region on a semiconductor substrate.
As shown in FIG. 1, on an upper surface of a silicon substrate 1 are sequentially formed a field insulating layer 2, a field oxide layer 3, a gate insulating layer 4, a gate conductive layer 5, a passivation layer 6, a photoresist pattern 7, a dry etching mask 8, and a metal silicide pattern 9.
The field insulating layer 2, the field oxide layer 3, the gate insulating layer 4, the gate conductive layer 5, the passivation layer 6, the photoresist pattern 7, and the dry etching mask 8 are formed by methods including an oxidizing method, a thermal oxidizing method, an RIE method, a LPCVD method, a sputtering method, and a CVD method.
FIG. 3A to FIG. 3C are cross-sectional views illustrating a method of fabricating a semiconductor device according to a conventional art.
Referring to FIG. 3A, on the upper surface of a semiconductor substrate 1 is formed a field insulating layer 2, then a field oxide layer 3 is formed by a thermal oxidizing method on the upper surface of the semiconductor substrate 1, and then the field oxide layer 3 is partially etched to form a gate insulating layer 4.
Next, a polysilicon layer 5 and an n+ doped polysilicon layer 6 are formed on the semiconductor substrate 1 and the field oxide layer 3, and then a photoresist pattern 7 is formed by a photolithography process.
Referring to FIG. 3B

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